Xinran Wang

2D Materials

Nanjing University, Nanjing, China

Email: xrwang@nju.edu.cn

Biography

   Professor Wang received his Ph.D. degree in physics from Stanford University in 2010. Between 2010 and 2011, he was a postdoctoral researcher in Prof. Hongjie Dai group at Stanford University and then in Prof. John Rogers group at University of Illinois at Urbana-Champaign. In December 2011, he joined Nanjing University as a professor in the School of Electronic Science and Engineering. Prof. Wang’s current research interest includes synthesis, properties and device applications of low-dimensional materials. He has published more than 10 papers in Science, Nature, and Nature series journals, with the total citation over 23000. 

Abstract for Presentation

Single-crystalline 2D semiconductor growth and device technology

   2D transition-metal dichalcogenide semiconductors are promising candidates in future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. In this talk, I will present our recent advances in this area. The main topics include wafer-scale single-crystal epitaxial growth, uniform bi-layer material growth, dielectric integration and Ohmic contact, and heterogeneous integration with mainstream technology. These advances clearly demonstrate the promise of 2D semiconductors in next-generation electronic and optoelectronic applications. 

References

[1] Weisheng Li et al., Nat. Electron., 2 563 (2019).
[2] Taotao Li et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00963-8.
[3] Wanqing Meng et al., Nat. Nanotech., (2021) DOI: 10.1038/s41565-021-00966-5.
[4] Zhihao Yu et al. IEDM (2020) DOI: 10.1109/IEDM13553.2020.9371917. 
[5] Lei Liu et al. Nature (2022), accepted.