Zhihao Yu

2D Materials

Nanjing University of Posts and Telecommunications, Nanjing, China

Email: zhihao@njupt.edu.cn

Biography

   Dr. Zhihao Yu graduated from Nanjing University majoring in electronic science and technology, and then worked as a postdoctor in Nanjing University and TSMC Corporate Research. In 2020, he joined the School of Electronic and Optical Engineering and the School of Integrated Circuit Science and Engineering in Nanjing University of Posts and Telecommunications, engaged in research on 2D semiconductor devices and integration. As the (co-)first/corresponding author, he has published more than 10 journal papers in Nature Nanotech., Nature Commun., Adv. Mater. etc., 4 papers in the top conference of IEEE IEDM with total citation of over 2,200. Among them, 4 papers were selected as ESI highly cited papers, and one conference paper was IEDM invited talk

Abstract for Presentation

Reliability of Ultrathin High-κ Dielectrics and EOT on 2D Semiconductors

   2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2 [1]. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics [2].

References

[1] W. Li, et al., Nature Electronics 2, 563(2019)
[2] Z. Yu, et al, IEEE IEDM 3.2, 1(2020)