Yaping Dan

Silicon Thin Film

Globle Institute of Future Technology (University of Michigan - Shanghai Jiao Tong University Joint Institute), Shanghai Jiao Tong University 200240, Shanghai, China

Email: yaping.dan@sjtu.edu.cn

Abstract for Presentation

Atomically thin delta-doping of self-assembled molecular monolayers by flash lamp annealing

for Si-based solar blind deep UV photodiodes

  Delta doping can find a wide range of applications in advanced metal-oxide field
effect transistors, deep UV photodetectors, quantum devices and others. In this work, we formed a delta-doping layer in silicon by employing the flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The delta-doping layer is atomically thin (<1nm). Low temperature Hall measurements show that the deltadoping layer is in metallic state and exhibits a weak localization phenomenon, implying that a two-dimensional electron gas is formed. When we form such an n-type deltadoping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector is created, which traditionally was only possibly by using wide bandgap semiconductors such as gallium nitride (GaN) or silicon carbide (SiC).

References

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[4] Yokogawa, T.; Takahashi, K.; Kusumoto, O.; Uchida, M.; Yamashita, K.; Kitabatake, M. 4H-SiC Delta-Doped Accumulation-Channel MOSFET. Materials Science Forum 2002, 389-393, 1077-1080.