Xinwei Wang

Emerging thin film technology

Peking University Shenzhen Graduate School, Shenzhen, China

Email: wangxw@pkusz.edu.cn

Biography

Education  

2008–2012   Ph.D. in Chemical Physics   Harvard University, United States

2004−2008   B.Sc. in Physics            Peking University, China

Academic Appointments  

2020−    Associate Professor (PI, tenured), Shenzhen Graduate School, Peking University  

2013−2020 Assistant Professor (PI), Shenzhen Graduate School, Peking University  

2012     Postdoctoral Fellow, Harvard University

Academic Service  

AVS, Thin Film Division, Program Committee Member  

IAEA Technical Meeting, International Program Advisory Committee Member

Research Interest  

Atomic layer deposition (ALD): process development and mechanism investigation.  

ALD applications in microelectronics, detectors, photovoltaics, and catalysis.

Published >100 peer-reviewed journal papers, citations >4000, H-factor 34.

Website:  https://web.pkusz.edu.cn/wangxw

Abstract for Presentation

Atomic Layer Deposition of Iron-Group Chalcogenides: Processes and Mechanisms

The iron-group (iron,  cobalt, and nickel)  chalcogenides are a class of  fascinating materials, which have many applications in cutting-edge  technologies. Atomic layer deposition (ALD) is a highly useful technique to fabricate thin film materials. Over the past few years,  ALD of iron, cobalt, and nickel chalcogenides has been developing  very rapidly, with many new deposition processes being developed  and demonstrated for promising applications  [1]. To date, a number of  chalcogenides, including FeSx  [2-3], CoSx [4], NiSx [5-6], FeSe2, CoSe2, and NiSe2 [7], have been successfully synthesized by  thermal  and/or  plasma-assisted ALD,  and  studies  on  surface  chemistry  and  film growth  mechanisms  have  also  been  followed  to  understand  the  underlying  ALD mechanisms  [9-11].  On the other hand,  despite of  numerous  progresses, considerable scientific and technological gaps and challenges are still prominent in this area. In this representation, I will report our latest progresses on the ALD of iron, cobalt, and nickel chalcogenides,  with particular focuses  on the process development and detailed growth mechanism investigations. 

References

[1] X. Wang, Chem. Mater., 33 (2021) 6251.

[2] Z. Guo, X. Wang, Angew. Chem. Int. Ed., 57 (2018) 5898.

[3] Y . Shao, Z. Guo, H. Li, Y . Su, X. Wang, Angew. Chem. Int. Ed., 56 (2017) 3226.

[4] H. Li, Y . Gao, Y . Shao, Y . Su, X. Wang, Nano Lett., 15 (2015) 6689.

[5] H. Li, Y . Shao, Y . Su, Y . Gao, X. Wang, Chem. Mater., 28 (2016) 1155.

[6] H. Li, R. Zhao, J. Zhu, Z. Guo, W . Xiong, X. Wang, Chem. Mater., 32 (2020) 8885.

[7] Z. Guo, R. Zhao, S. Yan, W . Xiong, J. Zhu, K. Lu, X. Wang, Chem. Mater., 33 (2021) 2478.

[8] R. Zhao, X. Wang, Chem. Mater., 31 (2019) 445.

[9] R. Zhao, S. Xiao, S.  Yang, X. Wang, Chem. Mater., 31 (2019) 5172.

[10] J. Zhu, R. Zhao, J. Shi, Q. Wa, M. Zhang, X. Wang, Chem. Mater., 33 (2021), 9403.