Jong-Hyun Ahn
Silicon Thin Film
EE department, Yonsei University
EE department, 50 yonsei-ro, Seodaemun-gu, Seoul, Republic of Korea, 03722
Email: ahnj@yonsei.ac.kr
Biography
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Education PhD in Materials Sci & Engi., POSTECH, South Korea, 2001
Professional Activities Professor, Yonsei University, 2015 Associate Professor, Yonsei University, 2013 Assistant/Associate Professor, Sungkyunkwan University, 2008 Postdoctoral associate, University of Illinoise at UC, 2004 President of Korean graphene society, 2020-2021
Award and Honors Samil Prize, 2021 The Minister of Science and Technology Prize, 2020 The National Academy of Science Award, 2018 President’s Young Scientist Award, 2011
Research Interests · Flexible and wearable electronics · 2D materials · Ultrathin Si nanomembrane
Representative Publications 1. S. Hwangbo et al., "Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor", Nat. Nanotech., 17, 500 (2022) 2. M. Choi et al., "Full color active-matrix organic-light emitting diode display on human skin based on a large area MoS2 backplane", Science Advances, 6, eabb5898 (2020) 3. A. Katiyar et al., "Breaking the absorption limit of Si towards SWIR wavelength range via strain engineering", Science Advances, 6, eabb0576, (2020) 4. M. Choi et al., "Flexible Active-Matrix Organic Light-Emitting Diode Display Enabled by MoS2 Thin-Film Transistor", Science Advances, 4, eaas8721 (2018) 5. T.H. Han, et al., "Extremely Efficient Flexible Organic Light-emitting Diodes with Modified Graphene Anode" Nature Photonics, 6, 105 (2012) 6. Sukang Bae, et al., "Roll-to-roll production of 30-inch graphene film for transparent electrodes", Nat. Nanotech., 5, 574 (2010) |
Abstract for Presentation
Photoresponsivity enhancement of Si nanomembrane using strain engineering
Silicon has been widely used in the microelectronics industry. However, its photonic applications are restricted to visible and partial near-infrared spectral range owing to its fundamental optical band gap (1.12 eV). With recent advances in strain engineering, material properties, including optical band gap, can be tailored considerably. This paper reports the strain-induced shrinkage in the Si band gap, providing photosensing well beyond its fundamental absorption limit in Si nanomembrane (NM) photodetectors (PD). The Si-NM PD pixels were mechanically stretched (biaxially) by a maximum strain of ~3.5% through pneumatic pressure-induced bulging, enhancing photoresponsivity and extending the Si absorption limit up to 1550 nm, which is the essential wavelength range of the lidar sensors for obstacle detection in self-driving vehicles. Additionally, the development of deformable three-dimensional optoelectronics via gas-pressure-induced bulging facilitated the realization of novel device designs with concave and convex hemispherical architectures, which mimics the electronic prototypes of biological eyes.
Figure 1. The SOAP-based characterization of the crystallization process for GeSb2Te4.
References
[1] A. Katiyar et al., "Breaking the absorption limit of Si towards SWIR wavelength range via strain engineering", Science Advances, 6, eabb0576, (2020)
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