Xiaodong Pi
Silicon Thin Film
Zhejiang University
38 Zheda Road, Hangzhou 310027, China
Email: xdpi@zju.edu.cn
Biography
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Dr. Xiaodong Pi is a professor in the State Key Laboratory of Silicon Materials, School of Materials Science and Engineering and Hangzhou Innovation Center at Zhejiang University. He is a member of the editorial advisory board of Applied Physics Letters (2017–2022), a member of the advisory panel of Nanotechnology (2019-2021) and a member of the NSFC Panel for Semiconductor Science & Technology 2035. He obtained his PhD degree in the department of physics at the University of Bath, UK with the Derek Chesterman medal for original research in 2004. He then carried out research in the department of engineering physics at McMaster University, Canada and in the department of mechanical engineering at the University of Minnesota, USA. Dr. Pi joined Zhejiang University as an associated professor near the end of 2008. He was promoted to be a full professor in 2012. |
Dr. Pi’s research mainly concerns silicon and silicon carbide materials and devices. He has published a series of papers in peer-reviewed journals and meetings (e. g., PRL, PRB, APL, Advanced Materials, Advanced Functional Materials, Materials Science and Engineering R, ACS Nano, Nano Letters, Nano Energy and IEDM).
Abstract for Presentation
Hyperdoping silicon nanocrystals for infrared applications
As an important silicon material in the nanometer-sized regime, silicon nanocrystals (Si NCs) have various potential applications [1]. Among all kinds of approaches for the synthesis of silicon nanocrystals nonthermal plasma is very attractive [2], especially given its capability of hyperdoping Si NCs in a non-equilibrium environment. In the past few years we have hyperdoped Si NCs with boron (B) and phosphorus, which effectively absorb near-infrared and mid-infrared light. This enables us to fabricate infrared photodetectors [3] and synaptic devices [4] based on hyperdoped Si NCs. Erbium (Er) is also hyperdoped into Si NCs. Two well separated near-infrared emissions of Er-hyperdoped Si NCs may be employed for temperature sensing, indicating that Er-hyperdoped Si NCs are a powerful platform of ratiometric near-infrared fluorescence [5].
References
[1] Z. Y. Ni, et al., Materials Science & Engineering R 138, 85-117 (2019).
[2] L. Mangolini, et al., Nano Lett. 5, 655–659 (2005).
[3] Z. Y. Ni, et al., ACS Nano 11, 9854-9862 (2017).
[4] H. Tan, et al., Nano Energy 52, 422-430 (2018).
[5] K. Wang, et al., submitted.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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