Qing Wan

Oxide Materials and Devices


Nanjing University,163 Xianlin Avenue, Qixia District, Nanjing City, Jiangsu Province, 210023, China 



Email: wanqing@nju.edu.cn



He has published more than 90 peer-reviewed journal papers. His research interests include the interface and defect engineering in both traditional and novel semiconductors, the rational design of semiconductor devices, as well as the power device fabrication and characteristics.Qing Wan is currently a professor in the college of Electronic Science and Engineering, Nanjing University, China. He received his B.S. degree from Zhejiang University in 1998, and PhD degree from Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences in 2004. From 2004 to 2005, he worked as a postdoctoral researcher at the Department of Materials, University of Cambridge. His research focused on the oxide-based semiconductors and new-concept device applications. Qing Wan has published more than 250 scientific papers, such as Nature Communications, Nano Lett., Adv. Mater., IEEE Electron Device Letters, and Appl. Phys. Lett. etc., which were SCI cited more than 15000 times. Qing Wan has received many awards, including National Youth Top-notch Talent, China Youth Science and Technology Award, Scientific and Technological Award of Zhejiang Province (first-class prize), Silver award of the young scientist star, Author of National Excellent Doctoral Dissertation of PR China, Special award of the President of the Chinese Academy of Sciences, NSF Distinguished Young Scholars.



Abstract for Presentation

Oxide-based Neuromorphic devices for Brain-like Computing

Our brain is an intelligent biological computer with a power consumption of only 20W, and neurons are the basic unit of our brain for memory and information processing. The development of new concept devices with synaptic/neuronal function is of great significance for "brain-like chip" and "brain-like computing". Recent researches showed that the multi-terminal ion-modulated transistors based on interface ion/electron modulation have great prospects in this field. In 2009, we successfully developed the first multi-terminal amorphous IGZO-based electric-double-layer transistor using solid electrolyte as the gate dielectric, and studied the application of such devices for artificial synapses/neurons. In recent 10 years, our research group has successfully realized the bionics of biological information processing functions such as short/long-term memory of biological synapses/neurons, spike time-dependent plasticity (STDP), high-pass filtering, dendritic dynamics algorithm and Photoelectric Leaky integrate and fire (LIF) visual perception. Our results provide a new material and device choice for ultra-low power brain dynamics computing and bionic perception.


[1] J. Jiang, Q. Wan*, J. Sun, A. X. Lu, Appl. Phys. Letts. 95 (2009) 152114.

[2] J. M. Zhou, C. J. Wan, L. Q. Zhu, Y. Shi, Q. Wan*, IEEE Electron Device Letters. 34 (2013) 1433-1435 (2013).

[3] L. Q. Zhu, C. J. Wan, L. Q. Guo, Y. Shi, Q. Wan*, Nature Communications. 5 (2014) 3158.

[4] Y. H. Liu, L. Q.*, P. Feng, Y. Shi, Q. Wan*, Adv. Mater. 27 (2015) 5599.

[5] C. Chen, Y. He, H. Mao, L. Zhu, X. Wang, Y. Zhu, Y. Zhu, Y. Shi, C. J. Wan*, Q. Wan*, Adv. Mater., 34 (2022) 2201895.