Fukai Shan

Oxide Materials and Devices

Qingdao University, Ningxia Road 308#, Qingdao, China

Email: fkshan@qdu.edu.cn

Biography

Dr. Shan received his Ph.D. degree in 2000 and has been engaged in the research of semiconductor devices for more than 20 years, mainly in the research of flat panel displays and integrated circuits. He has published more than 130 SCI refereed papers as the first and corresponding author, and has been invited to make the conference reports and invited talks at the International Conferences for dozens of times. He has served as the chairman of the parallel sessions of the International Conference for more than ten times. He has been the member of the technical committee of Beijing Branch of Society for Information Display, director of Shandong Electronics Society and deputy director of integrated circuit branch. From 2014 to 2021, it was approved for general projects of the National Natural Science Foundation twice, the project for the special defense zone project of the science and Technology Commission of the State Military Commission. Currently, he is running a key R & D project of the Ministry of Science and technology. In 2018, he won the second prize of science and technology award of colleges and universities of Shandong Province (the first), and he won the second prize of Natural Science Award of Shandong Province in 2021 (the first).

Abstract for Presentation

Humidity Effect on electrical performance of solution-processed In2O3 thin film transistor

Solution-processed thin film transistor (TFT) based on metal oxide shows great potential in the next-generation display technology [1]. During the conventional sol-gel process, the relative humidity (RH) during the coating process has great impact on the quality of thin film and the device properties [2]. However, the effect of RH in storage environment on the electrical performance of the TFTs is rarely studied. In addition, the RH is critical for the semiconductor manufacturing and device packaging, it is also necessary to keep the RH constant in moisture-sensitive environments (such as cleaning rooms and glove boxes). In this work, solution-processed indium oxide (In2O3) TFT is fabricated, and the electrical performance of the device is investigated after being exposed to various RH conditions. It is found that the electrical performance of the In2O3 TFT exhibits clear response to the RH variation (Figure 1). The inherent mechanism about the humidity effect on the electrical performance is elaborated, this is due to the “donor effect” from the absorbed water molecules [3]. It is believed that this work provides guidance for the oxide TFT applied in flat display industries.

References 
[1] Y. Ding, C. Wang, Z. Xin, F. Shan*, IEEE Electron Device Lett., 41 (2020) 413-416.
[2] H.H. Zhu, A. Liu, Y.Y. Noh*, IEEE Electron Device Lett., 41 (2020) 1033-1035.
[3] J.S. Park, J.K. Jeong*, H.J. Chung, Y.G. Mo, H.D. Kim, Appl. Phys. Lett., 92 (2008) 072104.