The 29th International Conference on Amorphous and Nano-crystalline Semiconductors-Chuan Liu (Topic 1)

Chuan Liu

Amorphous System and Theory

Sun Yat-sen University, Guanzhou, China

Email: Liuchuan5@mail.sysu.edu.cn

Biography

Chuan Liu received Ph.D. degree from University of Cambridge (U.K.) where he studied organic electronics. Then he moved to National Institute for Materials Science (NIMS, Japan) as a postdoc researcher and to Dongguk University (Seoul, South Korea) as an assistant professor. He has been a full professor in Sun Yat-sen University (China) since 2014. He is mainly interested in theoretical and experimental studies in oxide and organic semiconductors, interfacial engineering for thin-film devices, and printed electronics. He has received Korean Information Display Society Gold Award and Best Career Award from Semiconductor Science and Technology of IOP Publishing for the research in semiconductors for transistors. He has served in the editorial board of the journal Semiconductor Science and Technology and as an associate editor of Journal of the Society for Information Display since 2017.

Abstract for Presentation

Transistors with Partial Gates and Transistor-Diode Hybrid Integration: Device Performance and Unified Theories

Advanced field-effect transistors (FETs) with non-trivial gates (e.g., offset-gates, mid-gates, split-gates or multi-gates) or hybrid integrations (e.g., with diodes, photodetectors, or field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials and device factors. Here, we show that they could be understood within the same physical picture, i.e., charge transport from gated to non-gated semiconductors. We propose an indicator base on material and device factors for characterizing the transport and derive a unified and simplified solution for describing the current-voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for understanding and designing of these complex, innovative devices within a second.

Figure 1. (a) Transistors and integration containing coupled channels. (b) The key physical process, i.e., charges from gated to non-gated semiconductors. (c) Transport mechanisms in materials.

References

[1] C. Liu,* et. al, Advanced Science, 2022, 2104896.

[2] X. Li; C. Liu*, C. Liu, H. Ou, J. She, S. Deng, J. Chen*, IEEE Electron Device Lett., 2020, 41, 405.