Zhongming Wei
2D Materials
Institute of Semiconductors, CAS, Beijing, China
Email: zmwei@semi.ac.cn
Biography
Zhongming Wei received his B.S. from Wuhan University in 2005, and Ph.D. from Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices.
|
Abstract for Presentation
Polarization-Sensitive Photodetectors based on 2D Layered Semiconductors
Two dimensional (2D) materials have been attracting wide interest due to their peculiar structural properties and fascinating applications in the areas of electronics, optics, biology, and catalysis. As the promising substitutes for the gapless graphene, transition metal dichalcogenides (TMDCs, such as MoS2, WS2, etc.) which also have layered crystalline structure with strong in-plane bonding but weak interlayer action (van der Waals force) show natural band gaps. In our group, several 2D semiconductors and related alloys or heterostructures were successfully fabricated, and their optical properties and utilization in multifunctional optoelectronics were systematically investigated subsequently. Photodetectors with high polarization sensitivity are in great demand in advanced optical communication. Here, we demonstrate that photodetectors based on 2D layered GeSe, GeSe2 and GeAs, which are extremely sensitive to polarized light (from visible to the infrared), due to its reduced in-plane structural symmetry [1-5]. The polarimetric image sensor based on GeSe also showed high performance.
References
[1] Yue-Yang Liu,* Zhongming Wei*, and et al. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. Adv. Mater. 2022, 34 (2), 2107206.
[2] Zhongming Wei*, Weida Hu*, Jianlu Wang*, and et al. Ferroelectric-tuned van der Waals heterojunction with band alignment evolution. Nat. Commun. 2021, 12, 4030.
[3] Zhongming Wei*, and et al. Direct Polarimetric Image Sensor and Wide Spectral Response based on Quasi-One-Dimensional Sb2S3 Nanowire. Adv. Funct. Mater. 2021, 31 (6), 2006601.
[4] Zhongming Wei*, and et al. Direct Synthesis and Enhanced Rectification of Alloy-to-Alloy 2D Type-II MoS2(1-x)Se2x/SnS2(1-y)Se2y Heterostructures. Adv. Mater. 2021, 33 (8), 2006908.
[5] Zhongming Wei*, Jingbo Li*, Wenping Hu*, and et al. Short-Wave Near-Infrared Linear Dichroism of Two-Dimensional Germanium Selenide. J. Am. Chem. Soc. 2017, 139 (42), 14976-14982.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
Connect with us: