Yingfeng Li
Si-based Nanostructures
North China Electric Power University
2 Beinong Road, Huilongguan Town, Changping District, Beijing, China
Email: liyingfeng@ncepu.edu.cn
Biography
Yingfeng Li School of New Energy, North China Electric Power University, ChangPing District, Beijing, 102206, China 86-10-61772332 (office), 86-13426375621 (cell phone) liyingfeng@ncepu.edu.cn
Sex: Male Date of Birth: 1982 Health: Excellent Citizenship: People's Republic of China
Educational background: 2007-2011 Ph.D. Dept. of Chemical Engineering, Tsinghua University Advisor: Professor Yangxin Yu 2004-2007 M.S. Institute of Science, China University of Petroleum Advisor: Professor Guiwu Lu 2000-2004 B.S. Institute of Science, China University of Petroleum
Research Interests and basic skill:
1. Nano optics and optical management (Plasmonic, Leaky mode). 2. DFT calculations on electronic transport. 3. Thermodynamics theory and MD, MC, Gibbs simulations.
Research experiences: 2011 – Now Associate professor, North China Electric Power University New Energy Materials and Optoelectronic Technology Centre Research fields:
Passivation for the Si/Pedot:pss interface. |
Abstract for Presentation
Silicon nanostructures and solar cell designs based on their light management characteristics
Silicon-based solar cells are currently the most mature solar cells, thanks to the abundance, low cost, and good photoelectric properties of silicon materials. The main advances in silicon-based solar cells stem from the continuous optimization of the light absorption and electrical separation. Silicon nanostructures have the characteristics of waveguides and present excellent light management capabilities. To this end, we have carried out systematic work on the light management characteristics of silicon nanostructures, the low-cost controllable preparation of silicon micro-nano structures, and the design of solar cells based on their light management characteristics. In terms of the light management characteristics of silicon nanostructures, the laws of their light scattering and absorption performance are clarified, and mathematical equations were obtained to predict their light management performance; the physical mechanism of light management performance of silicon nanostructures is founded, and based on which, some new types of silicon nanostructures with broad light absorption capacity were designed; in addition, we have found that silicon nanostructures will lead to apparent skin effects for the absorbed light. In terms of low-cost preparation of silicon micro-nano structures, the preparation of silicon nanowires, nanocones, and ultra-thin silicon nanosheets is realized by using the maskless chemical solution etching method, and the size, surface quality, and density are controllable. In terms of solar cell design based on the light management characteristics of silicon nanowires, silicon nanowires/PEDOT:PSS solar cells based on a variety of silicon nanostructures were designed, and their IV characteristics were predicted; flexible silicon nanowires/PEDOT:PSS solar cells without substrate were designed, and their mechanical flexibility and light transmittance were evaluated; plane silicon/PEDOT:PSS and silicon nanowires/PEDOT:PSS cells were prepared, and the optical management performances of silicon nanowires were verified. The unique light management characteristics of silicon nanowires have good application potential in silicon-based solar cells, photon detectors, and other optoelectronic devices.
References
[1] Y. Li, M. Li, R. Li, P. Fu, T. Wang, Y. Luo, J.M. Mbengue, M. Trevor, Exact comprehensive equations for the photon management properties of silicon nanowire, Scientific reports, 6 (2016).
[2] Y. Li, P. Fu, R. Li, M. Li, Y. Luo, D. Song, Ultrathin flexible planar crystalline-silicon/polymer hybrid solar cell with 5.68% efficiency by effective passivation, Applied Surface Science, 366 (2016) 494-498.
[3] M. Li, Y. Li, W. Liu, L. Yue, R. Li, Y. Luo, M. Trevor, B. Jiang, F. Bai, P. Fu, Metal-assisted chemical etching for designable monocrystalline silicon nanostructure, Materials Research Bulletin, 76 (2016) 436-449.
[4] Y. Li, M. Li, D. Song, H. Liu, B. Jiang, F. Bai, L. Chu, Broadband light-concentration with near-surface distribution by silver capped silicon nanowire for high-performance solar cells, Nano Energy, 11 (2015) 756-764
[5] Y. Li, M. Li, R. Li, P. Fu, L. Chu, D. Song, Method to determine the optimal silicon nanowire length for photovoltaic devices, Applied Physics Letters, 106 (2015) 091908.
[6] Y. Li, M. Li, P. Fu, R. Li, D. Song, C. Shen, Y. Zhao, A comparison of light-harvesting performance of silicon nanocones and nanowires for radial-junction solar cells, Scientific reports, 5 (2015) 11532.
[7] Y. Li, M. Li, R. Li, P. Fu, B. Jiang, D. Song, C. Shen, Y. Zhao, R. Huang, Linear length-dependent light-harvesting ability of silicon nanowire, Optics Communications, 355 (2015) 6-9.
[8] Zhongliang Gao, Ting Gao, Qi Geng, et al. Improving light absorption of active layer by adjusting PEDOT:PSS film for high efficiency Si-based hybrid solar cells. Solar Energy, 2021, 228, 299-307.
[9] Guilu Lin, Zhongliang Gao, Ting Gao, et al. Research progress in improving the performance of PEDOT:PSS/Micro- and Nano-textured Si heterojunction for hybrid solar cells, Journal of Materiomics, 2021,7,1161-1179
[10] Zhongliang Gao, Ting Gao, Yongcong Chen, et al. Silicon Nanowire Design for Ultrahigh Extinction by Dipole Near-Field Interaction in Transparent Solar Cells. The Journal of Physical Chemistry C, 2021, 125, 3781-3792
[11] Gao Z , Lin G ,Zheng Y,et al.Excellent light-capture capability of trilobal SiNW for ultra-high JSC in single-nanowire solar cells. Photonics Research. 2020. 8(6).
[12] Gao Z, Lin G , Chen Y , et al. Moth-eye nanostructure PDMS films for reducing reflection and retaining flexibility in ultra-thin c-Si solar cells. Solar Energy, 2020, 205:275-281.
[13] Zhongliang Gao, Qi Geng, Zhe Wang, et al. Helical SiNW design with a dual-peak response for broadband scattering in translucent solar cells. Materials Advances, 2022, 3, 953.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
Connect with us: