Jiangyong Wang 

Emerging thin film technology

Center of Semiconductor Materials and Devices, Shantou University, Shantou, China 

Email: wangjy@stu.edu.cn

Biography

Dr. JiangYong Wang received his Ph.D degree in 1997 at the University of the Free State in South Africa. From 1998 to 2000, he worked as a research associate at the Physics Department of Kansas State University in USA. In 2001, he joined the Max Plank Institute for Metals Research as a senior scientist in Germany. In 2009, he was appointed as a full professor at the Physics Department of Shantou University in China. He is currently the deputy director of the Center of Semiconductor Materials and Devices，Shantou University. He has published two book chapters and more than 150 papers (~110 SCI papers), including Nat. Comm., PRL, Adv. Mater., Acta Mater., PRB, APL. His scientific interests focus on quantification of sputter depth profiling, diffusion, segregation and phase transformation in thin films.

Abstract for Presentation

Advances in Quantitative Depth Profiling and Phase Transformation in a-Si/Al layered structures

Recently, the deconvolution method with the TV (Total Variation)-Tikhonov algorithm and the MRI (atomic Mixing-Roughness-Information depth) depth resolution function was proposed for reconstructing the original in-depth distribution of composition directly from measured depth profiling data [1,2]. This method possesses with high precision and strong anti-noise performance as compared with the conventional iterative method. As an example, the original layer structure of a Ni/Cr multilayer is deconvoluted directly from the measured AES depth profiling data and is agreed well with the TEM measurement.

By the quantification of measured AES depth profiling data for the as-deposited and annealed a-Si/Al layer structures, the corresponding diffusion coefficient parameters, activation energy and pre-exponential factor, are determined, indicating the diffusion of Si into Al grain boundaries (GBs) [3,4]. Upon the Si GB diffusion, the nucleation of c-Si takes place at Al GBs, the growth of c-Si within the Al sublayer and the layer-exchange between Al and Si sublayers occur subsequently [5,6].

References

[1] S.Y. Lian, Z.J Wang, C.L Wang, Y.L. Yan, F.R Lin, J.Y. Wang*, C.K. Xu*, Deconvolution method for obtaining directly the original in-depth distribution of composition from measured sputter depth profile, Vacuum, 166 (2019) 196.

[2] C.L Wang, J. Li, X.X. Liu, Y.L. Chen, Z.H. Tan, H.W. Li, H. Yang, S.Y Lian, J.Y. Wang*, Congkang Xu*, Optimization of the two parameters in the deconvolution procedure for obtaining the original in-depth distribution of composition from measured sputter depth profile by genetic algorithm，Vacuum, 184 (2021) 109866.

[3] JY Wang* and EJ Mittemeijer, A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin solid film systems by Auger electron spectroscopical sputter depth profiling, Journal of Materials Research, 19 (2004) 681.

[4] Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient for Si/Al multilayers, JY Wang*, A Zalar, and EJ Mittemeijer, Applied Surface Science, 222 (2004) 171.

[5] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer, Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by interface thermodynamics, Physical Review Letters, 100 (2008) 125503.

[6] ZM Wang*, L Gu, F Phillipp, JY Wang, LPH Jeurgens and EJ Mittemeijer, Metal-catalyzed growth of semiconductor nanostructures without solubility and diffusivity constraints, Advanced Materials, 23 (2011) 854.