Hui Fang
Silicon Thin Film
Dartmouth College (USA), 15 Thayer Drive, Hanover, NH 03755 USA
Email: hui.fang@dartmouth.edu
Biography
Abstract for Presentation
Transferred Si Thin Film for Implantable Bioelectronics
New forms of materials can often enable new device and system applications. In this talk, I will discuss our studies on transferred Si thin film materials for neuroelectronic applications. Firstly, because of their ultrathin nature and excellent mechanical flexibility, transferred Si thin film leads to large scale, high resolution soft electrode implants, enabling unprecedented bio-signal mapping capabilities for both the heart and brain. Secondly, I will introduce our recent concept on semiconductor nanomeshes. By making transferred Si thin film into homogeneous nanomeshes, we achieve high mobility semiconductors that are intrinsically stretchable to conventional microelectronic layouts. Together, our work demonstrates that transferred Si thin film is a unique approach to transforming conventional electronics for emerging applications.
References
[1] H. Fang, K.J. Yu, C. Gloschat, Z. Yang, E. Song, C.-H. Chiang, J. Zhao, S.M. Won, S. Xu, M. Trumpis, Y. Zhong, S.W. Han, Y. Xue, D. Xu, S.W. Choi, G. Cauwenberghs, M. Kay, Y. Huang, J. Viventi, I.R. Efimov, and J.A. Rogers, Nature Biomedical Engineering, 1, 0038, 2017.
[2] X. Han, K. J. Seo, Y. Qiang, Z. Li, S. Vinnikova, Y. Zhong, X. Zhao, P. Hao, S. Wang, and H. Fang, npj Flexible Electronics, 3:9, 2019.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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