6 TFTs for Display
Sun Yat-Sen University, Guangzhou, China
Shanghai Jiaotong University, Shanghai, China
Kyung Hee University, Seoul, Republic of Korea
Kochi University of Technology, Kochi, Japan
Presentation Title:Solid phase crystallization (SPC) of hydrogen-doped indium oxide (InOx:H) for high mobility thin-films transistors.
Ningbo Institute of Materials Technology and Engineering, Ningbo, China
Presentation Title: Al-induced microstructure regularization toward high-mobility oxide thin-film transistors.
Peking University, Beijing, China
Presentation Title:Carbon nanotube TFTs for display applications.
South China University of Technology, Guangzhou, China
Presentation Title:Eco-friendly flexible silicon doped amorphous SnO2 thin-film transistor.
Pohang University of Science and Technology, Pohang, Republic of Korea
Presentation Title:Development of high-performance perovskite thin-film transistors.
Chung-Ang University, Seoul, Republic of Korea
Presentation Title:Amorphous Oxide Thin-Film-Transistors for Process-in-Sensor and Optoelectronic Applications.
Shandong University, Jinan, China
Presentation Title:A thin-film transistor with no apparent channel for high aperture ratio pixel architectures.
Institute of Microelectronics, CAS, Beijing, China
Presentation Title:Charge transport in disordered semiconducting materials for TFTs.
Soochow University, Suzhou, China
Presentation Title:Dominant Role of Air Ambient in Dynamic Bending Degradation of Flexible LTPS TFTs.
Nanjing University, Nanjing, China
Presentation Title: Growth integration of designable Si nanowires for high performance flexible electronics and displays
BOE Technology Group Co., Ltd., Beijing, China
Presentation Title:Future oxide, Challenges and Applications.
Peking University Shenzhen Graduate School, Shenzhen, China
Presentation Title:Elimination of Persistent Photoconduction in Amorphous InZnO Thin-Film Transistor via Dual-Gate Pulses.
Fudan University, Shanghai, China
Presentation Title:The Road for 2D Semiconductor in Silicon Age.
Institute of Microelectronics Chinese Academy of Science, Beijing, China
Presentation Title: High Performance Sub-50nm Channel Length Vertical IGZO TFTs for Active Matrix Application
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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