4 Oxide Materials and Devices
Shengdong Zhang
Jinfeng Kang
Co-Chair
Peking University, Beijing, China
Email: zhangsd@pku.edu.cn
Co-Chair
Peking University, Beijing, China
Email: kangjf@pku.edu.cn
Chair
Nanjing University, Nanjing, China
Email: wanqing@nju.edu.cn
TOPICS
Invited Speakers
Ningbo Institute of Materials Technology and Engineering, CAS, Ningbo, China
Presentation Title:Al-induced microstructure regularization toward high-mobility oxide thin film transistors.
Peking University, Beijing, China
Presentation Title:Understanding of the volatile and non-volatile switching in Ag-based memristors.
University of Lisbon, Caparica, Portuga
Presentation Title:Metal Oxides: the demand for the Green Electronics of our future.
Hanyang University, Seoul, Republic of Korea
Presentation Title: Recent Progresses on Oxide Semiconductor Material and Devices using Atomic Layer Deposition.
Qingdao University, Qingdao, China
Presentation Title:Humidity Effect on electrical performance of solution processed In2O3 thin film transistor.
Nanjing University, Nanjing, China
Presentation Title:Metal Oxide-based Neuron for Neuromorphic Computation and Perception.
Nanjing Tech University, Nanjing, China
Presentation Title:Improving Photoelectrochemical Performance of TiO2 Nanowire Arrays by Designing Specific Core–Shell Interface.
Purdue University, West Lafayette, USA
Presentation Title:Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic and memory applications.
Wuhan University, Wuhan, China
Presentation Title:P-type oxides in Back-end-of line Semiconductor Devices.
Westlake University, Hangzhou, China
Presentation Title:Solution-Processed Metal Oxide Semiconductors for Flexible
Dynamic Sensor Arrays.
Nanjing University, Nanjing, China
Presentation Title: Oxide-based Neuromorphic devices for Brain-like Computing.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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