2 Si Thin Film
Chair
Zhejiang University, Hangzhou, China
Email: xdpi@zju.edu.cn
Co-Chair
Fudan University, Shanghai, China
Email: yfm@fudan.edu.cn
Co-Chair
Ecole Polytechnique, Palaiseau, France
Email: pere.roca@polytechnique.edu
Co-Chair
Shandong University, Jinan, China
Email: qlguo@sdu.edu.cn
TOPICS
Invited Speakers
Yonsei University, Seoul, Korea
Presentation Title:Photoresponsivity enhancement of Si nanomembrane using strain engineering.
Shanghai Jiao Tong University, Shanghai, China
Presentation Title:Atomically thin delta-doping of self-assembled molecular monolayers by flash lamp annealing for Si-based solar blind deep UV photodiodes.
Dartmouth College, Hanover, USA
Presentation Title:Transferred Si Thin Film for Implantable Bioelectronics.
Xiamen University, Xiamen, China
Presentation Title: Strain relaxation and photoluminescence of GeSn thin films grown by molecular beam epitaxy.
The Ohio State University, Columbus, USA
Presentation Title:Advanced Thin-Film Materials and Electronics for High-Resolution and Chronically Stable Neural Interfaces.
Helmholtz-Zentrum Berlin, Berlin, Germany
Presentation Title:Unravelling the room temperature non-radiative recombination mechanism at dangling bonds in hydrogenated amorphous silicon.
Fudan University, Shanghai, China
Presentation Title:Silicon Nanomembranes for Transient and Smart Sensors.
Shizuoka University, Hamamatsu, Japan
Presentation Title:Transport of electrons one by one through dopants in thin-Si devices.
Japan Advanced Institute of Science and Technology, Ishikawa, Japan
Presentation Title: Formation of polycrystalline silicon films on glass substrates by flash lamp annealing of amorphous silicon films.
Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
Presentation Title:Light Management with Surface Structure for High-efficiency Flexible Crystalline-Silicon Photovoltaics.
Fudan University, Shanghai, China
Presentation Title:Flexible Neural Electronic Interfaces with Single-Crystalline Silicon-Nanomembrane Transistor Array.
Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
Presentation Title:Femto- and picosecond infrared laser crystallization of amorphous Si:H films with included amorphous Ge layers.
Tsinghua University, Beijing, China
Presentation Title:Biodegradable materials for electronic medicine and biosensors.
Yonsei University, Seoul, Republic of Korea
Presentation Title:Unconventional Flexible Electronics for Next generation Brain-machine interfaces.
Institute of Semiconductors, CAS, Beijing, China
Presentation Title:Cryogenic mobility enhancement in Si MOS devices via SiO2 regrowth.
Soochow University, Suzhou, China
Presentation Title:Ultralong Silicon Nanowires for Flexible Sensors.
University of Texas at Arlington, Texas, USA
Presentation Title:Photonic Crystal Silicon Membrane Optoelectronics.
WELCOME TO CHINA TO ATTEND THE ICANS
23-26 August, Nanjing, China
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